AT28C64

Features Fast Read Access Time – 120 ns Fast Byte Write – 200 µs or 1 ms Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout Commercial and Industrial Temperature Ranges Description The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory with popular, easy-to-use features. The device is manufactured with Atmel’s reliable nonvolatile technology. (continued) Pin Configurations Pin Name A0 - A12 CE OE WE I/O0 - I/O7 RDY/BUSY NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect Don’t Connect TSOP Top View PDIP, SOIC Top View RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 VCC 27 WE 26 NC 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O7 18 I/O6 17 I/O5 16 I/O4 15 I/O3 LCC, PLCC Top View 64K (8K x 8) Parallel EEPROMs AT28C64 AT28C64X A7 A12 RDY/BUSY (or NC) DC VCC WE NC OE A11 A9 A8 NC WE VCC RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 A10 27 CE 26 I/O7 25 I/O6 24 I/O5 2...