Document
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)
– 1 to 64-byte Page Write Operation • Low Power Dissipation
– 40 mA Active Current – 100 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling and Toggle Bit for End of Write Detection • High Reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years • Single 5V ±10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only
1. Description
The AT28C64B is a high-performance electrically-erasable and programmable readonly memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS.