AT28LV256

AT28LV256 Features Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 10,000 Cycles Data Retention: 10 Years Single 3.3V ± 5% Supply JEDEC Approved Byte-Wide Pinout Commercial and Industrial Temperature Ranges 256K (32K x 8) Low Voltage CMOS E2PROM Description The AT28LV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28LV256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to (continued) Pin Configurations Pin Name A0 - A14 CE OE WE I/O0 - I/O7 NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect Don’t Connect PDIP, SOIC Top View AT28LV256 PLCC Top V...