AT28LV64B

AT28LV64B Features Single 3.3V ± 10% Supply 3-Volt-Only Read and Write Operation Software-Protected Programming Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Fast Read Access Time − 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 10,000 Cycles Data Retention: 10 Years JEDEC Approved Byte-Wide Pinout Commercial and Industrial Temperature Ranges Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µA. The AT28LV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow (continued) 64K (8K x 8) Low Voltage CMOS E2PROM with Page Write and Software Data Protection Pin Configurations Pin Name A0 - A12 CE OE WE I/O0 - I/O7 NC DC Function Addresses Chip Enable Output Enable Write Enable AT28LV64B PDIP, SOIC Top View Data Inputs/Outputs No Connect Don’t Connect PLCC Top View TSOP...