AT29BV020

AT29BV020 Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programming Fast Read Access Time - 250 ns Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for 256-Bytes Two 8 KB Boot Blocks with Lockout Fast Sector Program Cycle Time - 20 ms Max. Internal Program Control and Timer DATA Polling for End of Program Detection Typical Endurance > 10,000 Cycles CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges Description The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 250 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s Low Voltage Flash family of products. (continued) 2 Megabit (256K x 8) Single 2.7-volt Battery-Voltage™ CMOS Flash Memory AT29BV020 Pin Configurations Pin Name A0 - A17 CE OE WE I/O0 - I/O7 NC Function Addresses Chip Enable Output Enable Wri...