AT29C257

AT29C257 Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control and Timer Hardware and Software Data Protection Fast Program Cycle Times Page (64-Byte) Program Time - 10 ms Chip Erase Time - 10 ms DATA Polling for End of Program Detection Low Power Dissipation 50 mA Active Current 300 µA CMOS Standby Current Typical Endurance > 10,000 Cycles Single 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs Pin-Compatible with AT29C010A and AT29C512 for Easy System Upgrades 256K (32K x 8) 5-volt Only CMOS Flash Memory Description The AT29C257 is a 5-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 300 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. To allow for simple in-system reprogrammability, the AT29C257 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from a static RAM. Reprogramming the AT29C257 is performed on a page basis; 64-b...