May 2003
AO7407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7407 uses advanced trench ...
May 2003
AO7407 P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -1.2 A RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 170mΩ (VGS = -2.5V) RDS(ON) < 220mΩ (VGS = -1.8V)
SC-70 SOT 323 Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 ±8 -1.2 -1.0 -10 0.35 0.22 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 300 350 280
Max 360 425 320
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO7407
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-1.2A TJ=125°C VGS...