AO8806

Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration. Features VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 6.4 5.4 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO8806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=16V, V...