Jan 2003
AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926A uses advanced ...
Jan 2003
AO9926A Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Features
VDS (V) = 20V ID = 7A RDS(ON) < 26m Ω (VGS = 4.5V) RDS(ON) < 33m Ω (VGS = 2.5V) RDS(ON) < 42m Ω (VGS = 1.8V)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 20 ±8 7 6 40 2 1.44 -55 to 150
Units V V A
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 48 74 35
Max 62.5 110 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO9926A
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=5A VGS=1.8V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=5A Diode Forward Vol...
