Flash Memory. AM29PLI60C Datasheet

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AM29PLI60C Datasheet
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Part AM29PLI60C
Description 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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Manufacture Advanced Micro Devices
Datasheet
Download AM29PLI60C Datasheet




Advanced Micro Devices AM29PLI60C
Am29PL160C
Data Sheet
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Publication Number 22143 Revision C Amendment +4 Issue Date June 12, 2002



Advanced Micro Devices AM29PLI60C
Am29PL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
16 Mbit Page Mode device
— Byte (8-bit) or word (16-bit) mode selectable via
BYTE# pin
— Page size of 16 bytes/8 words: Fast page read
access from random locations within the page
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
5 V-tolerant data, address, and control signals
High performance read access times
— Page access times as fast as 25 ns at industrial
temperature range
— Random access times as fast as 65 ns
Power consumption (typical values at 5 MHz)
— 30 mA read current
— 20 mA program/erase current
— 1 µA standby mode current
— 1 µA Automatic Sleep mode current
Flexible sector architecture
— Sector sizes: One 16 Kbyte, two 8 Kbyte, one
224 Kbyte, and seven sectors of 256 Kbytes
each
— Supports full chip erase
Bottom boot block configuration only
Sector Protection
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked via programming
equipment
— Temporary Sector Unprotect command
sequence allows code changes in previously
locked sectors
Minimum 1 million write cycles guarantee
per sector
20-year data retention
Manufactured on 0.32 µm process technology
Software command-set compatible with JEDEC
standard
— Backward compatible with Am29F and Am29LV
families
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Package Options
— 44-pin SO (mask-ROM compatible pinout)
— 48-pin TSOP
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 22143 Rev: C Amendment/+4
Issue Date: June 12, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.



Advanced Micro Devices AM29PLI60C
GENERAL DESCRIPTION
The Am29PL160C is a 16 Mbit, 3.0 Volt-only Page
mode Flash memory device organized as 2,097,152
bytes or 1,048,576 words.The device is offered in a
44-pin SO or a 48-pin TSOP package. The word-wide
data (x16) appears on DQ15–DQ0; the byte-wide (x8)
data appears on DQ7–DQ0. This device can be pro-
grammed in-system or with in standard
EPROM programmers. A 12.0 V VPP or 5.0 VCC are
not required for write or erase operations.
The device offers access times of 65, 70, 90, and 120
ns, allowing high speed microprocessors to operate
without wait states. To eliminate bus contention the de-
vice has separate chip enable (CE#), write enable
(WE#), and output enable (OE#) controls.
The sector sizes are as follows: one 16 Kbyte, two
8 Kbyte, one 224 Kbyte and seven sectors of
256 Kbytes each. The device is available in both top
and bottom boot versions.
Page Mode Features
The device is AC timing, pinout, and package compat-
ible with 16 Mbit x 16 page mode Mask ROM. The
page size is 8 words or 16 bytes.
After initial page access is accomplished, the page
mode operation provides fast read access speed of
random locations within that page.
Standard Flash Memory Features
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write cy-
cles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that
automatically times the program pulse widths and
verifies proper cell margin. The Unlock Bypass mode
facilitates faster programming times by requiring only
two write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7
(Data# Polling) and DQ6 (toggle) status bits. After a
program or erase cycle has been completed, the de-
vice is ready to read array data or accept another
command.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via
programming equipment.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
2
Am29PL160C
June 12, 2002







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