AM80814-005
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER...
AM80814-005
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . . .
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 5.0 W MIN. WITH 8.5 dB GAIN
.310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80814-005 BRANDING 80814-5
DESCRIPTION The AM80814-005 device is a high power Class C
transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM80814-005 is supplied in the IMPAC™ Hermeti c M etal/ Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
23 1.0 28 250 - 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
6.5
°C/W
August 1992
1/5
AM80814-005
ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. ...