AM80814-025
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
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PRELIMINARY DATA
REFRACTORY/GOLD METAL...
AM80814-025
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN
.400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80814-025 BRANDING 80814-25
PIN CONNECTION DESCRIPTION AM80814-025 is a high power silicon Class C
transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM80814-025 is supplied in the industry-standard AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ TSTG
Power Dissipation*(TC ≤ 75˚C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
75 3.5 38 250 − 65 to +200
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.3 °C/W
*Applies only to rated RF amplifier operation
August 1992
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AM80814-025
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 10mA IE = 1mA IC = 20mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA...