Document
AM80912-005
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB GAIN
.310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80912-005 BRANDING 80912-5
PIN CONNECTION
DESCRIPTION The AM80912-005 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-005 i s housed in the unique IMPAC™ Hermetic Metal/Ceramic package with ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 75°C)
25 0.9 32 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W
*Applies only to rated RF amplifier operation
August 1992
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AM80912-005
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Valu e Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 1mA IE = 1mA IC = 5mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 250mA
48 3.5 48 — 30
— — — — —
— — — 0.5 300
V V V mA —
DYNAMIC
Value Symbol Test Conditions Min. Typ. Max. Unit
POUT ηc GP
Note:
f = 960 — 1215MHz f = 960 — 1215MHz f = 960 — 1215MHz
PIN = 0.7W PIN = 0.7W PIN = 0.7W
VCC = 28V VCC = 28V VCC = 28V
6.0 45 9.3
— — —
— — —
W % dB
Pul se format: 6.4 µS on 6.6 µ S off , repeat f or 3.3 ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, overall 20.8%
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AM80912-005
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE ZIN L ZIN H
ZCL TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L H
FREQ. L = 960 MHz M = 1090 MHz H = 1215 MHz
ZIN (Ω) 8.2 + j 8.52 11.1 + j 8.34 15.6 + j 6.8
ZCL (Ω) 10.5 + j 12.9 9.4 + j 11.3 9.0 + j 8.3 PIN = 0.7 W VCC = 28 V Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 C4 : : : : 100 µF Electrolytic Capacitor, 63V .1 µF Ceramic Capacitor Feedthrough Bypass SCI 712-022 .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor C5 C6 L1 L2 : : : : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor 100 pF Chip Capacitor No. 26 Wire, 4 Turn No. 26 Wire, 4 Turn
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AM80912-005
PACKAGE MECHANICAL DATA
.318/ .306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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