AM82223-010

AM82223-010 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY AT RATED CONDITIONS LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 9 W MIN. WITH 6.5 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM82223-010 BRANDING 82223-10 DESCRIPTION The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provided in the industry-standard AMPAC™ metal/ceramic hermetic package and incorporates internal input and output impedance matching structures along with a rugged, emitter-site ballasted overlay die geometry. AM82223-010 is capable of withstanding ∞:1 load mismatch at any phase angle under full rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 75˚C) 28 1.2 26 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 4.4 °C/W *Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. August 31, 1994...