AM82731-025

AM82731-025 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 6.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-025 BRANDING 82731-25 DESCRIPTION The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM82731-025 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base PDISS Ic VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 100 4 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case T...