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MID-14H22

Unity Opto Technology

SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR

SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR Description The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,bl...


Unity Opto Technology

MID-14H22

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Description
SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR Description The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,black plastic and side looking package. 4.00 ± .08 (.158±.003) 1.80 1.80 (.071) (.071) φ 1.50 (.059) MID-14H22 Package Dimensions Unit: mm ( inches ) 1.22 .048 1.10 ±.80 (.043±.032) 0.75 ± 0.8 (.030±.032) 1.50 ± .08 (.059±.032) Features l l l l 4.12 (.162) 1.66 ± .08 (.065±.003) Wide range of collector current Lensed for high sensitivity 60° 1.31 ± .12 (.052±.005) 0.50 TYP. (.020) Low cost plastic package For 850nm IR 14.30MIN (.563) .80 ± .02 (.031±.001) 1.00MIN (.039) 2.54 (.100) E C Notes : 1. All dimensions are in millimeters. (inches). 2. LED die vertical & horizontal placement tolerance is ± 0.12 mm. 3. Protruded resin under flange is 1.5 mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -55 C to +100 C -55 C to +100 C o o o o Unit mW V V 260oC for 5 seconds Unity Opto Technology Co., Ltd. 11/14/2000 MID-14H22 Optical-Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Test Conditions Ic=0.1mA Ee=0 Ic=0.1mA Ee=0 Ic=0.5 mA Ee=0.1mW...




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