SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR
Description
The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,bl...
SIDE LOOK PACKAGE
NPN PHOTO
TRANSISTOR
Description
The MID-14H22 is a
NPN silicon photo
transistor mounted in a lensed ,black plastic and side looking package.
4.00 ± .08 (.158±.003) 1.80 1.80 (.071) (.071) φ 1.50 (.059)
MID-14H22
Package Dimensions
Unit: mm ( inches )
1.22 .048
1.10 ±.80 (.043±.032) 0.75 ± 0.8 (.030±.032)
1.50 ± .08 (.059±.032)
Features
l l l l
4.12 (.162)
1.66 ± .08 (.065±.003)
Wide range of collector current Lensed for high sensitivity
60° 1.31 ± .12 (.052±.005) 0.50 TYP. (.020)
Low cost plastic package For 850nm IR
14.30MIN (.563)
.80 ± .02 (.031±.001)
1.00MIN (.039) 2.54 (.100)
E
C
Notes : 1. All dimensions are in millimeters. (inches). 2. LED die vertical & horizontal placement tolerance is ± 0.12 mm. 3. Protruded resin under flange is 1.5 mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature
Maximum Rating 100 30 5 -55 C to +100 C -55 C to +100 C
o o o o
Unit mW V V
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/14/2000
MID-14H22
Optical-Electrical Characteristics
Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Test Conditions Ic=0.1mA Ee=0 Ic=0.1mA Ee=0 Ic=0.5 mA Ee=0.1mW...