T-1 PACKAGE NPN PHOTOTRANSISTOR
Description
The MID-30A225 is a NPN silicon phototransistor mounted in a lensed , specia...
T-1 PACKAGE
NPN PHOTO
TRANSISTOR
Description
The MID-30A225 is a
NPN silicon photo
transistor mounted in a lensed , special dark plastic package.
5.25 (.207)
MID-30A225
Package Dimensions
£r 3.00 (.118)
Unit : mm (inches )
4.00 (.157)
1.00 (.040)
0.80±0.50 (.032±.020)
FLAT DENOTES COLLECTOR
Features
l l l l l
23.40MIN (.920)
Wide range of collector current Lensed for high sensitivity Low cost plastic package Good spectral matching to IRED (λp=940nm) type. Acceptance view angle : 50o
E C
0.50 TYP (.020) 1.00MIN (.040) 2.54 (.100)
Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 0.8 mm (.031") max 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o o
Unit mW V V
Unity Opto Technology Co., Ltd.
02/04/2002
. Optical-Electrical Characteristics
Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current
Iceo-Collector Dark Current -µA
MID-30A225
@ TA=25oC Symbol V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf ICEO IC(ON) 0.7 15 15 100 Min. 30 5 0.4 Typ . Max. Unit V V V µS nA mA Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA E...