TO-46 PACKAGE NPN PHOTOTRANSISTOR
Description
The MID-40H22 is a NPN silicon phototransistor mounted in a lensed, specia...
TO-46 PACKAGE
NPN PHOTO
TRANSISTOR
Description
The MID-40H22 is a
NPN silicon photo
transistor mounted in a lensed, special dark plastic package.
MID-40H22
Package Dimensions
Unit :mm( inches)
4.75 (.187)
5.80 (.228)
45°
Features
l l l l l
0.70 (.028)
COLLECTOR INDICATOR
Wide range of collector current Lensed for high sensitivity Low cost plastic package Acceptance angle : 25° Good spectral matching IRED (λp 880/850 nm) type
25.00MIN (.984 )
0.50 TYP (.020)
5.46 (.215)
1.00MIN (.039) 2.54 (.100)
E
C
Notes : 1. Tolerance is ± 010" unless otherwise noted . 2. Protruded resin under flange is .031" max 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -55oC to +100oC -55oC to +100oC 260 C for 5 seconds
o
Unit mW V V
Unity Opto Technology Co., Ltd.
12/5/2000
MID-40H22
Optical-Electrical Characteristics
Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Test Conditions Symbol Ic=0.1mA V(BR)CEO Ee=0 Ie=0.1mA V(BR)ECO Ee=0 Ic=0.5mA VCE(SAT) Ee=0.1mW/cm2 Vcc =5V, RL=1KΩ Tr IC=1mA Tf VCE=10V ICEO Ee=0 VCE=5V, λ=850nm IC(ON) Ee=0.1mW/cm2 Min. 30 5 0.4 15 15 100 1 Typ . @ TA=25oC Max.
Typical Optical...