GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Description
The MIE-114G1 is a GaAs infrared emitting diode molded in cle...
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Description
The MIE-114G1 is a GaAs infrared emitting diode molded in clear , lensed side looking package . The MIE-114G1 provides a broad range of intensity selection .
5.72±0.20 (.225±.008)
MIE-114G1
Package Dimensions
Unit: mm ( inches )
4.45±0.20 (.175±.008) 2.22 (.087) (.087) 1.22±0.10 (.048±.004) 1.55±0.02 (.061±.008) 0.76±0.10 (.030±.008)
12.70 MIN. (.500)
Features
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CATHODE
0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3
Selected to specific on-line intensity and radiant intensity ranges
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Low cost, plastic side looking package
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A
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Mechanically and spectrally matched to The MID-11422 Photo
transistor .
NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to + 100 C -55oC to + 100oC 260 C for 5 seconds
o o o o
mW A mA V
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-114G1
Optical-Electrical Characteristics
@ TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ee VF IR λ ∆λ 2θ1/2 Min. Typ . 0.6 1....