MIE-114L3

GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114L3 is a GaAlAs infrared emitting diode 4.45±0.2 MIE-114L3 Package Dimensions Unit: mm ( inches ) 0.76±0.1 (.030) molded in clear, lensed side looking package . The MIE-114L3 provides a broad range of intensity selection . 5.72±0.2 (.225) (.175) 2.22 (.087) (.087) 1.55±.02 (.061) 4.5±0.1 (.177) Features l Selected to specific on-line intensity and radiant intensity ranges l Low cost, plastic side looking package Mechanically and spectrally matched to the MID-11422 of phototransistor . 1.0 MIN. (.040) 12.7 MIN. (.500) l CATHODE 0.5 TYP. (.020) 2.54 NOM. (.100) SEE NOTE 3 C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o @ TA=25oC Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-114L3 Optical-Electrical Characteristics Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ee VF IR λp ∆λ 2θ1/2 Min. Typ . 0.6 1.4 Max. - 1.6 100 880 60 80 - @ TA=25oC Unit mW/cm2 V µA nm nm deg . Typical Optical-...