GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Description
The MIE-144H4 is a GaAlAs infrared emitting diod...
Description
GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Description
The MIE-144H4 is a GaAlAs infrared emitting diode, molded in clear, lensed side looking package. The MIE-144H4 provides a broad range of intensity selection.
1.22 (.048) 1.66±0.08 (.065±.003) 60° 0.80 (.032) 214.30MIN. (.563) 0.5TYP. (.020) 4.00±0.08 (.156±.003) 1.80 1.80 (.071) (.071) 4.12 (.162) φ 1.50 (.059)
MIE-144H4
Unit: mm( inches
1.50 (.059)
Package Dimensions
1.10 (.043) 0.75 (.030)
Features
l
Selected to specific on-line intensity and radiant intensity ranges
1.0MIN. (.039) 2.54±0.08 (.100±.003) (SEE NOTE 3)
l
Low cost , plastic side looking package
C
A
Notes : 1. All dimensions are in millimeters.(inches). 2. Protruded resin under flange is 1.5 mm (0.059") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-144H4
Optical-Electrical Characteristics
@ TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth Half View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ee VF IR λp ∆λ 2θ1/2 Min. Typ . 0.8 1.5 Max. Unit mW/cm2 V µA nm nm deg .
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1.6 ...
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