MIE-304A2

AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-304A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. 3.00 (.118) MIE-304A2 Unit: mm (inches) Package Dimensions 1.00 (.039) 5.25 (.207) 4.00 (.158) SEE NOTE 2 0.80±0.50 (.032±.020) FLAT DENOTES CATHODE Features l l l l l 23.40MIN. (.921) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 25° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-304A2 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2θ1/2 Min. 1.3 Typ ...