AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-406A4U is an infrared emitting diodes i...
Description
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package.
MIE-406A4U
Unit : mm ( inches )
Package Dimensions
φ4.75 (.187)
45° CATHODE INDICATOR
5.60 (.221)
Features
l l l l
.70 (.028) .25 MAX (.059 ) 25.00 MIN (.984) .50 TYP. (.020) 1.00 MIN (.040) 2.54 (.100) 5.46 (.215)
High radiant power and high radiant intensity Standard TO-46 package, radiant angle : 25° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o o @@ TT =25 C =25oC A AA
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature
Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-406A4U
Optical-Electrical Characteristics
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR= 5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λp ∆λ 2θ1/2 Min. Typ . 2.5 1.30 940 50 25 Max. 1.50 100 @ TA=25oC Unit mW/sr V µA nm nm d...
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