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MIE-406A4U

Unity Opto Technology

AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description The MIE-406A4U is an infrared emitting diodes i...


Unity Opto Technology

MIE-406A4U

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Description
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. MIE-406A4U Unit : mm ( inches ) Package Dimensions φ4.75 (.187) 45° CATHODE INDICATOR 5.60 (.221) Features l l l l .70 (.028) .25 MAX (.059 ) 25.00 MIN (.984) .50 TYP. (.020) 1.00 MIN (.040) 2.54 (.100) 5.46 (.215) High radiant power and high radiant intensity Standard TO-46 package, radiant angle : 25° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o o @@ TT =25 C =25oC A AA Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-406A4U Optical-Electrical Characteristics Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR= 5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λp ∆λ 2θ1/2 Min. Typ . 2.5 1.30 940 50 25 Max. 1.50 100 @ TA=25oC Unit mW/sr V µA nm nm d...




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