MIE-534A4

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-534A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. MIE-534A4 Unit: mm ( inches ) Package Dimensions φ 5.05 (.199) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features SEE NOTE 2 l l l l l 1.00 (.039) High radiant power and high radiant intensity FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiant angle : 30° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector 0.50 TYP. (.020) 23.40 MIN. (.921) 1.00MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o o @@ TA T=25 A=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55oC to +100oC -55oC to +100oC 260oC for 5 seconds Unit mW A mA V Unity Opto Technology Co., Ltd. 11/20/2000 MIE-534A4 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Relative Radiant Intensity Test Conditions IF=20mA IF=50mA VR=5V IF...