MIE-544A4

GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) MIE-544A4 Unit: mm(inch) Package Dimensions φ 5.05 (.199) 5.47 (.215) 5.90 (.230) 1.00 (.039) SEE NOTE 2 FLAT DENOTES CATHODE Features l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package, radiant angle : 40° Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.54 NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.40 MIN. (.921) l l l l 1.00MIN. (.039) A C Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 1 50 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-544A4 Optical-Electrical Characteristics o @ TA=25 C Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2θ1/2 Min. 1.0 T...