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MIE-546A4U

Unity Opto Technology

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-546A4U is infrared emitting diodes in GaAs techn...


Unity Opto Technology

MIE-546A4U

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Description
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. MIE-546A4U φ5.05 (.200) Package Dimensions Unite: mm ( inches ) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 45° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) .50 TYP. (.020) 1.00MIN (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-546A4U Optical-Electrical Characteristics Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA IF=200mA VR= 5V IF=20mA IF=20mA IF=20mA IR λ ∆λ 2θ1/2 940 50 45 Symbol Ie VF Min. Typ . 1.5 1.3 1.65 Max. 1.5 2.0 100 @ TA=25oC Unit mW/sr V µA nm nm - deg. ...




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