MIE-554A4

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-554A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) 5.90 (.230) MIE-554A4 Package Dimensions Unit:mm( inch) φ5.05 (.200) 5.47 (.215) SEE NOTE 2 1.0 (.040) FLAT DENOTES CATHODE Features 23.4 MIN. (.920) l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.54NOM. (.100) SEE NOTE 3 1.0MIN. (.040) 0.5 TYP. (.020) l l l l l Radiant angle : 50° A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260 C for 5 seconds o o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-554A4 Optical-Electrical Characteristics o @ TA=25 C Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λP ∆λ 2 θ1/2 ...