AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-556A2U is infrared emitting diodes in GaAs techn...
Description
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-556A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package.
MIE-556A2U
φ5.05 (.200)
Package Dimensions
Unite: mm ( inches )
5.47 (.215) 7.62 (.300) 5.90 (.230)
Features
l l l l l
High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 55°
1.00 (.040) FLAT DENOTES CATHODE
23.4 0MIN. (.920) .50 TYP. (.020)
1.00MIN (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-556A2U
Optical-Electrical Characteristics
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA IF=200mA VR= 5V IF=20mA IF=20mA IF=20mA IR λ ∆λ 2θ1/2 940 50 55 Symbol Ie VF Min. Typ . 1 1.3 1.65 Max. 1.5 2.0 100 @ TA=25oC Unit mW/sr V µA nm nm
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deg.
Ty...
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