MIE-814A2

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 6.70±0.20 (.264±.008) φ 5.00±0.20 (.197±.008) MIE-814A2 Package Dimensions Unit: mm ( inches ) 1.30 max (.051) Features l l l l 2.00(.079) 0.50 (.020) 28 typ (1.102) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Peak wavelength λP =940 nm Good spectral matching to Si-Photodetector 2.54NOM. (.100) 2.00±1.00 (.079±.039) C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-814A2 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2 θ1/2 940 50 50 Min. 1 Typ . 2 1.32 1.45 100 Max. Unit mW/sr V µA nm nm deg . Typical Optical-Electrical Chara...