MIE-824L3

GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-824L3 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package. φ5.00 (.197) MIE-824L3 Unit: inches Package Dimensions 4.30 (.169) 5.80 (.228) SEE NOTE 2 1.00 (.039) FLAT DENOTES CATHODE Features l l l l l 0.50 TYP. (.020) 23.40 MIN. (.921) High radiant power and high radiant intesity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle: 80° A 2.54 NOM. (.100) SEE NOTE 3 1.00MIN. (.039) C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-824L3 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2θ1/2 Min. 0.2 Typ . 0.7 1.32 940 50 120 Max. 1.50 100 Unit mW/sr V µA nm nm deg . Typic...