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MIG100J7CSB1W

Toshiba Semiconductor

TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG100J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J7CSB1W (600V/100A 7in1) High Power Switchi...


Toshiba Semiconductor

MIG100J7CSB1W

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Description
MIG100J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control Applications · · · · · · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No.E87989 Weight: 278 g (typ.) Equivalent Circuit 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) IN (B) 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) 7. 14. IN (V) FO (L) 1 2001-11-13 MIG100J7CSB1W Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2001-11-13 MIG100J7CSB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 3 2001-11-13 MIG100J7CSB1W Maximum Ratings (Tj = 25°C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward cu...




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