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MIG150J7CSB1W Dataheets PDF



Part Number MIG150J7CSB1W
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Datasheet MIG150J7CSB1W DatasheetMIG150J7CSB1W Datasheet (PDF)

MIG150J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150J7CSB1W (600V/150A 7in1) High Power Switching Applications Motor Control Applications · · · · · · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No.E8.

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MIG150J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150J7CSB1W (600V/150A 7in1) High Power Switching Applications Motor Control Applications · · · · · · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No.E87989 Weight: 278 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. V FO (U) VD (W) IN (B) 3. 10. 17. IN (U) FO (W) IN (X) U 4. 11. 18. GND (U) IN (W) IN (Y) B 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 1 2001-11-13 MIG150J7CSB1W Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2001-11-13 MIG150J7CSB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 3 2001-11-13 MIG150J7CSB1W Maximum Ratings (Tj = 25°C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector-emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature Range Module Isolation voltage Screw torque (Terminal) Screw torque (Mounting) AC 1 min M4 M5 Tc = 25°C, DC Tc = 25°C ¾ VD-GND Terminal IN-GND Terminal FO-GND Terminal FO sink current Tc = 25°C, DC ¾ Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C, DC ¾ P-N Power terminal ¾ Characteristic Condition P-N Power terminal ¾ Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO Tc Tstg VISO ¾ ¾ Rating 450 600 150 150 740 150 450 600 75 600 75 460 150 20 20 20 14 -20~ + 100 -40~ + 125 2500 2 3 Unit V V A A W °C V V A V A W °C V V V mA °C °C V N・m ¾ ¾ Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 150 A VIN = 15 V ® 0 V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min ¾ ¾ 1.6 ¾ ¾ ¾ VCC = 300 V, IC = 150 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load (Note 1) ¾ ¾ ¾ ¾ Typ. ¾ ¾ 1.9 2.1 2.4 1.3 0.3 0.3 1.1 0.2 Max 1 10 2.3 ¾ 2.8 2.2 ¾ ¾ 2.1 ¾ ms V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 150 A, Tj = 25°C Switching time trr toff tc (off) Note 1: Switching time test circuit & timing chart 4 2001-11-13 MIG150J7CSB1W 2. Brake stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 75 A VIN = 15 V ® 0 V VR = 600 V IF = 75 A, Tj = 25°C VCC = 300 V, IC = 75 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load (Note 1) Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min ¾ ¾ ¾ ¾ ¾ ¾ 1.7 ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ 1.8 2.0 ¾ ¾ 2.2 1.6 0.65 0.45 1.4 0.2 Max 1 10 2.2 ¾ 1 mA 10 2.6 2.2 ¾ ¾ 2.4 ¾ ms V V Unit mA Collector-emitter saturation voltage VCE (sat) Reverse current Forward voltage IR VF ton tc (on) Switching time trr toff tc (off) Note 1: Switching time test circuit & timing chart 3. Control stage (Tj = 25°C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Over current protection trip level Inverter OC Brake SC toff (OC) Trip level Reset level Trip level Reset level OT Case temperature OTr UV UVr tFO VD = 15 V ¾ High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) VD = 15 V Test Condition Min ¾ ¾ 1.4 2.2 ¾ ¾ 240 120 240 120 ¾ 110 ¾ 11.0 12.0 1 Typ. 13 52 1.6 2.5 10 ¾ ¾ ¾ ¾ ¾ 5 118 98 12.0 12.5 2 Max 17 68 1.8 V 2.8 12 mA 0.1 ¾ ¾ ¾ ¾ ¾ 125 ¾ 12.5 V 13.0 3 ms °C A Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < = 125°C VD = 15 V, Tj < = 125°C VD = 15 V Short circuit protection trip Inverter level Brake Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width A ms 4. Thermal resistance (Tc = 25°C) Characteristics Symbol Test Condition Inverter IGBT Junction to case thermal resistance Rth (j-c) Inverter FRD Brake IGBT Brake FRD Case to fin thermal resistance Rth (c-f) Compound is applied Min ¾ ¾ ¾ ¾.


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