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MIG50Q201H

Toshiba Semiconductor

High Power Switching Applications Motor Control Applications

MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor C...


Toshiba Semiconductor

MIG50Q201H

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Description
MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over−current, realtime-current-control (RTC), under−voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 3.5 V (Max.) toff = 2.6 µs (Max.) trr = 0.21 µs (Max.) : 2−110A1A : 520 g l Outline l Weight Equivalent Circuit 1 2001-05-29 MIG50Q201H Maximum Ratings (Tj = 25°C ) Stage Characteristic Supply voltage Collector−emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector−emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque AC 1 minute M5 Condition P-N power terminal ― Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― P−N power terminal ― Tc = 25°C, DC ― Tc = 25°C, DC Tc = 25°C ― VD−GND terminal IN−GND terminal FO−GND (L) terminal FO sink current ― ― Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO TC Tstg VISO ― Ratings 900 1200 50 50 300 150 900 1200 25 1200 25 140 150 20 20 20 14 −20 ~ +100 −40 ~ +125 2500 3 Unit V V A A W °C V V A V A W °C V V ...




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