Silicon MOS IC
Intelligent Power Devices (IPDs)
MIP705
Silicon MOS IC
s Features
q 3-pin intelligent power device q Five protective fu...
Description
Intelligent Power Devices (IPDs)
MIP705
Silicon MOS IC
s Features
q 3-pin intelligent power device q Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated q Acceptable both AC and DC power supply
7.3±0.1 1.8±0.1
unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
s Applications
q For automotive electric equipment
2.5±0.1
Parameter Drain to Source voltage Output peak current Output current Input voltage Input current Drain clamp energy Allowable power dissipation Operating ambient temperature Channel temperature Storage temperature
*1 *2 *3
Symbol VDS IOP IO VIN IIN EAS PD Topr Tch Tstg
Ratings 60 ±5 −1 to 2*1 − 0.5 to 6 ±10 55*2 1 10*3 −40 to +85 150 −55 to +150
Unit V A A V mA mJ W °C °C °C
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
0.75±0.1 2.3±0.1 4.6±0.1
1
2
3
1: IN 2: Drain 3: Source U Type Package
Maximum load current, not the average current. L = 10mH, IL = 3.32A, VDD = 30V, 1pulse, TC = 25°C TC = 25°C
s Block Diagram
D
Short circuit load protection
Over voltage protection
IN ESD protection
Gate cut-off circuit Over heat protection Over current protection
S
1.0±0.2
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
1
Intelligent Power Devices (IPDs)
s Electrical Characteristics (TC = 25 ± 2°C)
Parameter Drain to Source ON-resistance Drain to Source ON-voltage Drain clamp voltage Drain OFF current (1) Drain OFF current (2) Input voltage (High) Input voltage (Low) Input current Over current protection li...
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