MIR-3301

SUBMINIATURE PHOTOINTERRUPTER Description The MIR-3301 consists of a Gallium Arsenide in( Detector center ) ( Emitter center ) MIR-3301 Package Dimensions Unit: mm frared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter. 3.4±0.2 1.80 A D A D B B C C Features l l l l l Compact and thin 1.5±0.2 2.75±0.2 MIR-3301 : Compact DIP, long lead type Optimum detecting diatance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type ±15° ±15° 0.5±0.1 0.65 10±1.0 0.15 4.0 0~20° 0~20° Absolute Maximum Ratings @ TA=25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Minimum Rating Maximum Rating 50 5 75 30 5 75 100 -25oC to + 85oC -40oC to + 100oC Unit mA V mW V V mW mW Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC Unity Opto Technology Co., Ltd. 02/04/2002 MIR-3301 Optical-Electrical Characteristics Parameter Input Output Forward Voltage Reverse Current Collector Dark Current Symbol VF IR Iceo B Ic C D E Response Time (RISE) Response Time (FALL) *2 Leak Current tr tf ILEAK Min . 38 56 80 112 Typ . 1.2 20 20 Max . 1.4 10 100 75 108 151 216 100 100 0.1 µS µS µA Ic=100µA,Vce=2V RL=1K,d=1mm I...