MIT-4A11B

SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. MIT-4A11B Package Dimensions Unit : mm 2 C E 3 1 A `4.2 C 4 Features l l l l Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 1.2mm 4.2 1.5 (1.0) (0.3) 1.2 2.8 3.9 5.2 Applications l l l Cameras Floppy disk drives Printer 1.5±0.1Hold ± 4-0.5 4-0.15 4.0 MIN. *2.54 *3.2 NOTE 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Burr's dimension : 0.15MAX 3.( ) : Reference dimensions 4. The dimensions indicated by * refer to those measured from the lead base @TA =25 ¢J Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Tsol Maximum Rating 50 5 75 30 5 75 100 -25¢J to + 85¢J -40¢J to + 100¢J 260oC for 3 seconds Unit mA V mW V V mW mW Absolute Maximum Ratings Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Soldering temperature Unity Opto Technology Co., Ltd. 01/30/2002 MIT-4A11B Optical-Electrical Characteristics @TA =25¢J symbol VF IR Iceo Output Collector Emitter Saturation Voltage VCE(SAT) Collector Current Ic (on) tr Transfer Cha...