MIT-5A11B

SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. 2 1 11.00 (.433) 7.00 (.276) MIT-5A11B Package Dimensions 13.00 (.512) Unit: mm ( inches ) 4 3 2.00 (.079) 6.00 (.236) OPTICAL LINE Features l l l l l 0.50 (.020) Non -contact switching For- direct pc board Dual - in - line socket mounting Fast switching speed Choice of mounting configuration. 6.00 (.236) 2.54 (.100) 1.58 (.062) 0.50 (.020) 1.50 (.059) 9.50 (.370) 4.00 (.157) 5.00 (.197) 2.85 (.112) 7.27 (.286) φ1.50 (.059) 1.38 (.054) NOTE 1. Tolerance is ± 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25 C Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 -25 C to + 85 C -40 C to + 100 C o o o o o Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A11B Optical-Electrical Characteristics @TA =25oC Parameter Input Forward Voltage Reverse Current Output Collector Dark Current symbol VF IR Iceo Min. Typ. 1.2 Max. 1.4 10 100 0.4 1 20 20 10 100 100 Unit. V µA nA V mA µS µS Test Conditions IF =20mA...