MIT-5A11C

SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. 12.8 ± 0.05 (.504) 5.2 (.205) 3.2 ± 0.15 (.126) 6.4 (.252) MIT-5A11C Package Dimensions Unit: mm ( inches ) 1 4 2 3 (.150) 3.8 l l l l For- direct pc board or Dual - in - line socket mounting Fast switching speed Choice of mounting configuration. 0.5 (.020) 9.6 2.5 (.378) (.098) NOTE 1. Tolerance is ± 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 -25oC to +85oC -40oC to +100oC Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd. 5.8 l Non -contact switching 7.0 (.276) Features 1.72 (.068 04/01/2002 MIT-5A11C Optical-Electrical Characteristics @TA =25oC Parameter Input Forward Voltage Reverse Current Output Collector Dark Current Collector Emitter Collector Current Transfer Cha- Response Time (RISE) racteristics Response Time (FALL) symbol VF IR Iceo VCE(SAT) Ic (on) tr tf 500 20 20 100 100 Min. Typ. 1.2 Max. 1.4 10 100 0.4 Unit. V Test Conditions IF =20mA µA VR ...