Document
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain −
hFE = 1000 (Min) @ IC − 20 Adc
• Monolithic Construction with Built−in Base Emitter Shunt
Resistor
• Junction Temperature to + 200_C
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
Vdc
MJ11012
60
MJ11015/6
120
Collector−Base Voltage
VCB
Vdc
MJ11012
60
MJ11015/6
120
Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating Storage Junction Temperature Range
VEB IC IB PD
TJ, Tstg
5 30 1 200 1.15 −55 to + 200
Vdc Adc Adc W W/°C °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes for ≤ 10 Seconds
RqJC TL
0.87 °C/W 275 .