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MJ11016 Dataheets PDF



Part Number MJ11016
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High-Current Complementary Silicon Transistors
Datasheet MJ11016 DatasheetMJ11016 Datasheet (PDF)

MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc MJ11012 60 MJ11015/6 120 Collector−Base Voltage .

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MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc MJ11012 60 MJ11015/6 120 Collector−Base Voltage VCB Vdc MJ11012 60 MJ11015/6 120 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating Storage Junction Temperature Range VEB IC IB PD TJ, Tstg 5 30 1 200 1.15 −55 to + 200 Vdc Adc Adc W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes for ≤ 10 Seconds RqJC TL 0.87 °C/W 275 .


MJ11015 MJ11016 MJ11017


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