LTE21025R

DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR Self-aligned process entirely ion implanted Gold metallization realizes very stable characteristics and excellent lifetime Input matching cell improves input impedance and allows an easier design of wideband circuits. olumns LTE21025R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c APPLICATIONS Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 b DESCRIPTION 2 MAM131 e NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Top view Marking code: 439 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common emitter class-A test circuit. MODE OF OPERATION Class-A (CW) f (GHz) 2.1 VCE (V) 16 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations...