Document
SHINDENGEN
Schottky Rectifiers (SBD)
Dual
DF10SC9
90V 10A
FEATURES
•œ SMT
OUTLINE DIMENSIONS
Case : STO-220 Unit : mm
•œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ High current capacity with Small Package APPLICATION •œ Switching power supply •œ DC/DC converter •œ Home Appliances, Office Equipment •œ Telecommunication
RATINGS
•œAbsolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage VRM 90 V Repetitive Peak Surge Reverse VRRSM Voltage Pulse width 0.5ms, duty 1/40 100 V Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131•Ž 10 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125•Ž 150 A Repetitive Peak Surge Reverse PRRSM Power Pulse width 10ƒÊs, Rating of per diode, Tj=25•Ž 330 W •œElectrical Characteristics (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage VF I F =5A, Pulse measurement, Rating of per diodeMax.0.75 V IR V =V , Pulse measurement, Rating of per diode Max.3 mA Reverse Current R RM Junction Capacitance =10V, V Rating of per diode Cj f=1MHz, R Typ.185 pF Thermal Resistance ƒÆjc junction to case Max.1.2 •Ž/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
DF10SC9
Forward Voltage
10
Forward Current IF [A]
1
Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
DF10SC9
Junction Capacitance
f=1MHz Tc=25°C TYP per diode
1000
Junction Capacitance Cj [pF]
100
1
10
100
Reverse Voltage VR [V]
DF10SC9
1000
Reverse Current
Tc=150 °C [MAX]
100
Tc=150 °C [TYP]
Tc=125 °C [TYP]
Reverse Current IR [mA]
10 Tc=100 °C [TYP]
1
Tc=75 °C [TYP]
0.1
Pulse measurement per diode
0.01
0
20
40
60
80
100
Reverse Voltage VR [V]
DF10SC9
60
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
50
DC D=0.05 0.1 0.2
40
0.3
30 0.5 20 SIN 0.8
10
0
0
20
40
60
80
100
120
Reverse Voltage VR [V]
Tj = 150 °C
0 VR tp D=tp /T T
DF10SC9
16 14
Forward Power Dissipation
Forward Power Dissipation PF [W]
12 10 0.2 8 6 4 2 0 0.05 0.1 SIN 0.5
D=0.8 0.3
DC
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = 150 °C 0 tp D=tp /T T
IO
DF10SC9
20
Derating Curve
Average Rectified Forward Current IO [A]
DC 15 D=0.8
10
0.5 SIN 0.3 0.2
5
0.1 0.05
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 45V 0 0
IO
VR tp D=tp /T T
DF10SC9
200
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
150
non-repetitive, sine wave, Tj=125°C before surge current is applied
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM (t p) / PRRSM (t p=10µs) Ratio
1
0.1
1
10
100
Pulse Width t p [ µs]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
.