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DF10SC9 Dataheets PDF



Part Number DF10SC9
Manufacturers Shindengen Electric Mfg.Co.Ltd
Logo Shindengen Electric Mfg.Co.Ltd
Description Schottky Rectifiers (SBD) (90V 10A)
Datasheet DF10SC9 DatasheetDF10SC9 Datasheet (PDF)

SHINDENGEN Schottky Rectifiers (SBD) Dual DF10SC9 90V 10A FEATURES •œ SMT OUTLINE DIMENSIONS Case : STO-220 Unit : mm •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ High current capacity with Small Package APPLICATION •œ Switching power supply •œ DC/DC converter •œ Home Appliances, Office Equipment •œ Telecommunication RATINGS •œAbsolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`150 •Ž Operating Junction Temperature Tj 150 •Ž Ma.

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SHINDENGEN Schottky Rectifiers (SBD) Dual DF10SC9 90V 10A FEATURES •œ SMT OUTLINE DIMENSIONS Case : STO-220 Unit : mm •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ High current capacity with Small Package APPLICATION •œ Switching power supply •œ DC/DC converter •œ Home Appliances, Office Equipment •œ Telecommunication RATINGS •œAbsolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage VRM 90 V Repetitive Peak Surge Reverse VRRSM Voltage Pulse width 0.5ms, duty 1/40 100 V Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131•Ž 10 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125•Ž 150 A Repetitive Peak Surge Reverse PRRSM Power Pulse width 10ƒÊs, Rating of per diode, Tj=25•Ž 330 W •œElectrical Characteristics (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage VF I F =5A, Pulse measurement, Rating of per diodeMax.0.75 V IR V =V , Pulse measurement, Rating of per diode Max.3 mA Reverse Current R RM Junction Capacitance =10V, V Rating of per diode Cj f=1MHz, R Typ.185 pF Thermal Resistance ƒÆjc junction to case Max.1.2 •Ž/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF10SC9 Forward Voltage 10 Forward Current IF [A] 1 Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] DF10SC9 Junction Capacitance f=1MHz Tc=25°C TYP per diode 1000 Junction Capacitance Cj [pF] 100 1 10 100 Reverse Voltage VR [V] DF10SC9 1000 Reverse Current Tc=150 °C [MAX] 100 Tc=150 °C [TYP] Tc=125 °C [TYP] Reverse Current IR [mA] 10 Tc=100 °C [TYP] 1 Tc=75 °C [TYP] 0.1 Pulse measurement per diode 0.01 0 20 40 60 80 100 Reverse Voltage VR [V] DF10SC9 60 Reverse Power Dissipation Reverse Power Dissipation PR [W] 50 DC D=0.05 0.1 0.2 40 0.3 30 0.5 20 SIN 0.8 10 0 0 20 40 60 80 100 120 Reverse Voltage VR [V] Tj = 150 °C 0 VR tp D=tp /T T DF10SC9 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] 12 10 0.2 8 6 4 2 0 0.05 0.1 SIN 0.5 D=0.8 0.3 DC 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150 °C 0 tp D=tp /T T IO DF10SC9 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 10 0.5 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 45V 0 0 IO VR tp D=tp /T T DF10SC9 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125°C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM (t p) / PRRSM (t p=10µs) Ratio 1 0.1 1 10 100 Pulse Width t p [ µs] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP .


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