DAN217U

DAN217U Switching Diode (High speed switching) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 80 V IFM 300 mA Io 100 mA IFSM 4000 mA ●Feature High reliability ●Inner Circuit Data sheet 　　　 　 　 　 　 　 　 　 　 　　　 NotNeRewcDoemsimgennsded for ●Application High speed switching ●Structure Epitaxial planar ●Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Power dissipation * 　 　 　 PD Junction temperature Storage temperature Tj Tstg *2 elements total ●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals * Ct Reverse recoverytime trr ※Caution：static electricity *Capacitance：b/w 1pin and 2pin ●Packaging Specifications Packing Embo...