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DB104S Dataheets PDF



Part Number DB104S
Manufacturers Rectron Semiconductor
Logo Rectron Semiconductor
Description SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
Datasheet DB104S DatasheetDB104S Datasheet (PDF)

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION DB101S THRU DB107S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Surge overload rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-S .310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2) MECHANICAL DATA * Epoxy : Device has U.

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION DB101S THRU DB107S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Surge overload rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-S .310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2) MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 * UL listed the recognized component directory, file #E94233 .042 (1.1) .038 (1.0) .013 (.330) .003 (.076) .410 (10.4) .360 (9.4) .009 (9.4) .060 (1.524) .040 (1.016) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. o .335 (8.51) .320 (8.13) .135 (3.4) .115 (2.9) .205 (5.2) .195 (5.0) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current at T A = 40 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range I FSM T J, T STG 50 -55 to + 150 Amps 0 SYMBOL VRRM VRMS VDC IO DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element at 1.0A DC Maximum Reverse Current at rated DC Blocking Voltage per element NOTE: Suffix ā€œ-sā€ Surface Mount for Dip Bridge. @T A = 25 C @T A = 125 o C o SYMBOL VF DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS 1.1 5.0 0.5 Volts uAmps mAmps 2001-4 IR RATING AND CHARACTERISTIC CURVES ( DB101S THRU DB107S ) FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 60 PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 50 8.3ms Single Half Sine-Wave (JEDED Method) 40 30 .5 20 Single Phase Half Wave 60Hz Inductive or Resistive Load 10 0 0 2 4 6 10 20 40 60 NUMBER OF CYCLES AT 60Hz 100 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE, ( ) 160 INSTANTANEOUS FORWARD CURRENT, (A) 10 Pulse Width = 300us 1% Duty Cycle INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 10 1.0 1.0 0.1 TJ = 25 TJ = 25 0.1 .01 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) RECTRON .


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