DBA40

Ordering number:EN649C DBA40 Diffused Junction Silicon Diode 4.0A Single-Phase Bridge Rectifier Features · Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=100 to 400V. · Average rectified current:IO=4.0A. Package Dimensions unit:mm 1089 [DBA40] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions DBA40B 100 → → → → → DBA40C 200 → → → → DBA40E 400 2.6 4.0 80 150 Unit V A A A Ta=40˚C Ta=40˚C, mounted on 60×60×1.5mm3 AI fin 50Hz sine wave, 1cycle ˚C ˚C → –30 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge Parameter Forward Voltage Reverse Current Symbol VF IR IF=2.0A VR:At each VRM Conditions Ratings min typ max 1.05 10 Unit V µA Note:Mounted torque:0.49N·m max. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4249MO/1285KI, TS No.649-1/2 DBA40 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use...