DBB08

Ordering number :EN2772B DBB08 Diffused Junction Silicon Diode 0.8A Single-Phase Bridge Rectifier Features · Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. · Two type of package available, surface mount type and insertion type. · Glass passivation for high reliability. Electrical Connection Package Dimensions unit:mm 1189 Surface mount type (TM emboss taping) [DBB08] unit:mm 1247 Substrate inserting type (LT stick) [DBB08] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Alumina board* PCB 50Hz sine wave, 1cycle Conditions DBB08C 200 → → → → → DBB08G 600 0.8 0.5 30 150 –40 to +150 Unit V A A A ˚C ˚C Electrical Characteristics at Ta = 25˚C, per constituent element of bridge Parameter Forward Voltage Reverse Current Thermal Resistance Symbol VF IR Rth(j-a) IF=0.4A VR:At each VRM Mounted on Cu foil (1mm× 1mm) on alumina board Mounted on PCB Conditions Ratings min typ max 1.05 10 76 134 Unit V µA ˚C/W ˚C/W Note*:Surface mount type. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/62096GI (KOTO)/92294MO 8-7589/4218TA, TS 8-2176 No.2772-1/2 DBB08 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipmen...