DBES105A

DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features ■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051067 -08-Mar-01 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 DBES105a Equivalent Circuit Rs Flip-Chip Dual Diode Rp Cj0 Cpar Rs(Ω) 4.4 Cjo(fF) (0V) 9.5 Cpar(fF) 5.8 Fco(THz) 2.4 Fco = 1/(2π Rs [Cpar + Cjo]) Rp can be neglected Absolute Maximum Ratings (1) Tamb. = 25°C Symbol Vak Iak Parameter Reverse anode-cathode voltage Forward anode-cathode current Typ. values -5 10 Unit V mA (1) Operation of this device above anyone of these parameters may cause permanent damage. Imax vs Tamb 12 10 8 I max( ...