DBF20T

Ordering number:EN3404A DBF20T Silicon Diffused Junction Type 2.0A Single-Phase Bridge Rectifier Applications · For primary rectification as switching regulator. Package Dimensions unit:mm 1202 [DBF20T] Features · High reliability attained glass passivation. · High surge. · Plastic molded structure. · Peak reverse voltage:VRM=200 to 600V. · Average rectified current:IO=2.0A. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions DBF20TC 200 → → → → → DBF20TE 400 → → → → DBF20TG 600 2.0 1.5 80 150 Unit V A A A Tc=114˚C, with 50×50×1.5mm3 AI fin Ta=25˚C, without fin 50Hz sine wave, 1 cycle ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge. Parameter Forward Voltage Reverse Current Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VF IR Rth(j-a) Rth(j-c) IF=0.75A VR:At each VRM Without fin With AI fin Conditions Ratings min typ max 1.05 10 50 10 Unit V µA ˚C/W ˚C/W Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/N120MH, JK (KOTO) No.3404-1/2 DBF20T No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, ...