DCG010

Ordering number:EN2791B DCG010 Silicon Epitaxial Planar Type (Cathode Common) Ultrahigh-Speed Switching Diode Features · Ideally suited for use in hybrid ICs because of very small-sized package. · Fast switching speed. · Small interterminal capacitance. Package Dimensions unit:mm 1187A [DCG010] 1:Anode1 2:Anode2 3:Cathode1, Cathode2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Current(1µs) Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Unit rating Total rating Unit rating Total rating Unit rating total rating Conditions SANYO:MCP Ratings 85 80 300 450 100 150 4 6 100 125 –55 to +150 Unit V V mA mA mA mA A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Symbol VF1 VF2 VF3 IR1 IR2 C trr IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp Conditions Ratings min typ 0.60 0.72 1.20 0.1 0.5 3.0 4.0 max Unit V V V µA µA pF ns Reverse Current Interterminal Capacitance Reverse Recovery Time Marking:W6 Reverse Recovery Time Test Circuit Electrical Connection (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/92995GI (KOTO)/5108TA, TS No.2791-1/2 DCG010 No products described or contained herein are intended for use in surgical implant...