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DCG10

Sanyo Semicon Device

High-Speed Rectifiers/ High-Frequency Rectifiers

Ordering number:EN4706 DCG10 Silicon Epitaxial Planar Type (Twin Type, Anode Common) High-Speed Rectifiers, High-Frequ...


Sanyo Semicon Device

DCG10

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Description
Ordering number:EN4706 DCG10 Silicon Epitaxial Planar Type (Twin Type, Anode Common) High-Speed Rectifiers, High-Frequency Rectifiers Features · Ideal for use in hybrid ICs because of small-sized package. Package Dimensions unit:mm 1239A [DCG10] 1:Anode 2:Cathode 3:Anode SANYO:PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Surge Forward Current Average Rectified Current Peak Forward Current Junction Temperature Storage Temperature Symbol VRM VR IFSM IO IO IFM IFM Tj Tstg Total value Total value 50Hz sine wave, 1 cycle Conditions Ratings 200 200 5 1.0 1.5 2.0 3.0 150 –50 to +150 Unit V V A A A A A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a)1 Rth(j-a)2 IF=10µA IF=1A VR=200V VR=30V, f=1MHz IF=1A, –dIF/dt=10A/µs 4.0 90 300 100 300 Conditions Ratings min 200 1.0 1.3 10 typ max Unit V V µA pF ns ˚C/W ˚C/W Mounted on ceramic board (250mm2×0.8mm) Marking:PB SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/30195MO (KOTO) AX-8089 No.4706-1/2 DCG10 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipm...




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