DCJ010

Ordering number : EN5474A DCJ010 Silicon Epitaxial Planar Type Diode High-Speed Switching Diode Features ⋅ Rectifier applications. ⋅ Ideally suited for use in hybrid ICs because of ultrasmall-sized package. ⋅ Small interterminal capacitance. Package Dimensions unit: mm 1246A [DCJ010] Electrical Connection 3 1:Anode 2:Cathode 3:Cathode/Anode 1 2 SANYO: MCP Absolute Maximum Ratings at Ta = 25 ˚C Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM Io IFSM P Tj Tstg (1 µs) (Total) Conditions Ratings 20 20 200 100 300 100 125 –55 to +125 Unit V V mA mA mA mW ˚C ˚C Electrical Characteristics Ta = 25 ˚C Parameter Forward Voltage Reverse Current Interterminal Capacitance Symbol VF IR C IF=10 mA VR=15 V VR=6 V, f=1 MHz Conditions Ratings min typ max 1.0 0.1 4.0 Unit V µA pF SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 63097GI(KOTO) No.5474-1/2 DCJ010 10 –2 IR — VR 10 –2 IR — VR Reverse Current, IR — nA Reverse Current, IR — A 10 2 125˚C 10 2 10 1 100˚C 75˚C 50˚C Ta=25˚C 10 1 125˚C 0 10 0 100˚C 10 75˚C –1 10 –1 10 50˚C = a T 25˚C 4 8 12 16 20 10 –2 0 4 8 12 16 20 10 –2 0 Reverse Voltage, VR — V 5 3 2 Reverse Voltage, VR — V IF — VF D1 Forward Current, IF — mA 5 3 2 100 5 3 2 10 5 3 2 1 5 3 2 0.2 0.4 IF — V...